Proportional settling time adjustment for diode voltage and temperature measurements dependent on forced level current

ABSTRACT

A temperature sensor circuit and system providing accurate digital temperature readings using a local or remote temperature diode. In one set of embodiments a change in diode junction voltage (ΔV BE ) proportional to the temperature of the diode is captured and provided to an analog to digital converter (ADC), which may perform required signal conditioning functions on ΔV BE , and provide a digital output corresponding to the temperature of the diode. DC components of errors in the measured temperature that may result from EMI noise modulating the junction voltage (V BE ) may be minimized through the use of a front-end sample-and-hold circuit coupled between the diode and the ADC, in combination with a shunt capacitor coupled across the diode junction. The sample-and-hold-circuit may sample V BE  at a frequency that provides sufficient settling time for each V BE  sample, and provide corresponding stable ΔV BE  samples to the ADC at the ADC operating frequency. The ADC may therefore be operated at its preferred sampling frequency rate without incurring reading errors while still averaging out AC components of additional errors induced by sources other than EMI.

CONTINUATION DATA

This application is a divisional of application Ser. No. 11/068,250titled “Proportional Settling Time Adjustment For Diode Voltage AndTemperature Measurements Dependent On Forced Level Current” filed onFeb. 28, 2005, whose inventors are Robert St. Pierre and Scott C.McLeod, and which has issued as U.S. Pat. No. 7,429,129, which is herebyincorporated by reference in its entirety as though fully and completelyset forth herein.

FIELD OF THE INVENTION

This invention relates generally to the field of integrated circuitdesign and, more particularly, to the design of temperature sensor andmeasurement devices.

DESCRIPTION OF THE RELATED ART

Many digital systems, especially those that include high-performance,high-speed circuits, are prone to operational variances due totemperature effects. Devices that monitor temperature and voltage areoften included as part of such systems in order to maintain theintegrity of the system components. Personal computers (PC), signalprocessors and high-speed graphics adapters, among others, typicallybenefit from such temperature monitoring circuits. For example, acentral processor unit (CPU) that typically “runs hot” as its operatingtemperature reaches high levels may require a temperature sensor in thePC to insure that it doesn't malfunction or break due to thermalproblems.

Often, integrated circuit (IC) solutions designed to measure temperaturein a system will monitor the voltage across one or more PN-junctions,for example a diode or multiple diodes at different current densities toextract a temperature value. This method generally involves amplifying(or gaining up) a small voltage generated on the diode(s), and thensubtracting voltage from the amplified temperature-dependent voltage inorder to center the amplified (gained) value for conversion by ananalog-to-digital converter (ADC). In other words,temperature-to-digital conversion for IC-based temperature measuringsolutions is often accomplished by measuring a difference in voltageacross the terminals of typically identical diodes when differentcurrent densities are forced through the PN junctions of the diodes. Theresulting change (ΔV_(BE)) in the base-emitter voltage (V_(BE)) betweenthe diodes is generally proportional to temperature. (It should be notedthat while V_(BE) generally refers to a voltage across the base-emitterjunction of a diode-connected transistor and not a voltage across asimple PN-junction diode, for the sake of simplicity, V_(BE) is usedherein to refer to the voltage developed across a PN-junction ingeneral.) More specifically, a relationship between V_(BE) andtemperature is defined by the equation

$\begin{matrix}{V_{BE} = {\eta\;\frac{kT}{q}\ln\frac{I}{I_{S}}}} & (1)\end{matrix}$where η is the ideality factor of the PN junction, k is Boltzman'sconstant, q is the charge of a single electron, T represents absolutetemperature, I_(s) represents saturation current and I represents thecollector current. A more efficient and precise method of obtainingΔV_(BE) is to supply the PN junction of a single diode with two separateand different currents in a predetermined ratio. Consequently, ΔV_(BE)may be related to temperature by the equation

$\begin{matrix}{{\Delta\; V_{BE}} = {\eta\frac{kT}{q}{\ln(N)}}} & (2)\end{matrix}$where N is a constant representing a pre-selected ratio of the twoseparate currents that are supplied to the PN junction of the diode.

A typical dynamic range of ΔV_(BE), however, is small relative todynamic ranges that are typical of analog-to-digital converters (ADCs).That is, ΔV_(BE), which is used to measure the PN junction temperature,generally has a small dynamic range, for example on the order of around60 mV in some systems. Therefore it is generally required to furtherprocess ΔV_(BE) in order to match the dynamic range of ADCs. Typically,in order to obtain the desired conversion values at varioustemperatures, ΔV_(BE) is multiplied by a large gain, and then centeredto zero, which can be accomplished by subtracting a fixed voltage.

In general, implementations today perform the temperature signalprocessing (TSP) in a separate temperature sensor circuit that generatesa sufficiently large voltage signal, which is fed into a separate ADCthat may have been designed using a number of different topologies.Temperature-to-digital converters (TDC) of such implementations usuallycontain complex circuits with high power dissipation. The yield of theseTDCs during the fabrication process may also be low as there are manycomponents that need to be matched for a given process spread.

An example of a typical temperature measurement system, which includesan ADC, is illustrated in FIG. 1. A TSP circuit 100 is coupled to an ADC130. TSP 100 may comprise current sources 104 and 106, where a currentprovided by 104 is an integer (N) multiple of a current provided by 106,a diode 102, an integration capacitor 126, an offset capacitor 122, again capacitor 124, and an operational amplifier (OP-AMP) 120,interconnected as illustrated in FIG. 1. P1 110 and P2 112 representnon-overlapping clocks that provide switching between two circuitconfigurations as shown. When P1 110 is closed, current source 104powers TSP 100 and P2 112 is open. Similarly, when P2 112 is closed,current source 106 powers TSP 100 and P1 110 is open. Switching betweencurrent sources 104 and 106, different currents are forced through thejunction of diode 102 resulting in a change in diode-junction-voltage(ΔV_(BE)). Although omitted in FIG. 1, it should be understood that wheneither P1 110 or P2 112 is open, the respective uncoupled current sourcemay be shunted to ground. In the circuit configuration shown, voltagesampling occurs when P1 110 is closed, and charge transfer takes placewhen P2 112 is closed. In other words, during operation, switching froma configuration of P1 110 closed and P2 112 open to a configuration ofP1 110 open and P2 112 closed, results in ΔV_(BE) effectively “pumping”charge to gain capacitor 124, which in turn leads to integrationcapacitor 126 also receiving a charge. More specifically, opening P1 110and closing P2 112 results in a value drop of diode-junction-voltageV_(BE), expressed as ΔV_(BE). Consequently, ΔV_(BE) appears across theterminals of capacitor 126, in case capacitor 126 is equal in value tocapacitor 124. If capacitor 124 is greater in value than capacitor 126,then ΔV_(BE) will be amplified, or “gained up”, hence an amplified valueVtemp 131 will appear at the output of OP-AMP 120. Voffset 132 issubtracted through offset capacitor 122.

Voltage-temperature relationships characterizing TSP 100 may bedescribed by the following equations:Vtemp=C _(T) /C _(I) *ΔV _(BE)(T)−C _(O) /C _(I) *Voffset, whereC _(T) /C _(I)=(ADC dynamic range)/(ΔV _(BE)(Tmax)−ΔV _(BE)(Tmin)), andVoffset=(C _(T) /C _(I) *ΔV _(BE)(Tmax)−(ADC dynamic range))*C _(I) /C_(O).

Tmax and Tmin represent maximum and minimum diode temperatures,respectively. ADC dynamic range indicates a range of valid voltagevalues required for proper ADC operation.

In certain cases, for example when diode 102 is a remote diode coupledto OP-AMP 120 through twisted pair wires, the output temperature readingmay artificially increase due to system noise. ElectromagneticInterference (EMI) noise may modulate the diode voltage V_(BE),resulting in inaccurate temperature-readings, as ADC 130 will typicallynot differentiate between a noise-induced temperature increase versustrue temperature increase.

Other corresponding issues related to the prior art will become apparentto one skilled in the art after comparing such prior art with thepresent invention as described herein.

SUMMARY OF THE INVENTION

In one set of embodiments the invention comprises a system and methodfor performing temperature monitoring in a digital system by capturing achange in a diode junction voltage (ΔV_(BE)), which is proportional to atemperature of the diode, and using an analog-to-digital converter (ADC)to perform required signal conditioning functions on ΔV_(BE) with theoutput of the ADC providing a numeric value corresponding to thetemperature of the diode. Errors in the measured temperature that mayresult from EMI noise modulating the junction voltage V_(BE) may beminimized through the use of a front-end sample-and-hold circuit coupledbetween the diode and the ADC, in combination with a capacitor coupledacross the diode junction.

The sample-and-hold circuit may sample the diode voltage when a firstcurrent associated with the temperature measurement is forced throughthe diode junction, and repeat the same for all subsequent diodevoltages generated when different currents are forced through the diodejunction. In one embodiment, the sample and hold circuit presents thevarious sampled voltages (VBE's) to the ADC for conversion at the fullconversion speed. The overall sample time for each individual generateddiode voltage may be dependent on the value of the corresponding currentforced through the diode junction. This may allow for the totalconversion time to be divided appropriately and proportionally to allowthe maximum settling time for forced currents of a lower value, forexample a first settling time associated with a first input signal, andthe minimum settling time for forced currents of a higher value, forexample a second settling time associated with a second input signal. Inthis manner, high overall conversion rates may be preserved.

Thus, various embodiments of the invention may provide a means forperforming temperature monitoring/measurement by applying a ΔV_(BE)signal to an ADC that performs signal-processing functions, includingmatching and centering the voltage range of ΔV_(BE) to the dynamic rangeof the ADC, while minimizing temperature measurement errors that mayarise due to EMI noise interference.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing, as well as other objects, features, and advantages ofthis invention may be more completely understood by reference to thefollowing detailed description when read together with the accompanyingdrawings in which:

FIG. 1 illustrates a temperature measurement system that utilizes anADC, in accordance with prior art;

FIG. 2 illustrates one embodiment of a temperature sensor circuitutilizing an internal ADC; and

FIG. 3 shows a diagram illustrating the EMI induced temperature error asa function of peak EMI induced current.

FIG. 4 illustrates one embodiment of a sample-and-hold circuitconfigured to sample V_(BE) voltages across a PN-junction;

FIGS. 5A-5F illustrate timing diagrams corresponding to one embodimentof a temperature measurement circuit employing an ADC with a coupledsample-and-hold circuit;

FIGS. 6A-6F illustrate the signals of the corresponding timing diagramsof FIGS. 5A-5F on a finer scale;

FIG. 7A illustrates the signal of the corresponding timing diagram ofFIG. 6E on a finer scale; and

FIG. 7B illustrates the signal of the corresponding timing diagram ofFIG. 6F on a finer scale.

While the invention is susceptible to various modifications andalternative forms, specific embodiments thereof are shown by way ofexample in the drawings and will herein be described in detail. Itshould be understood, however, that the drawings and detaileddescription thereto are not intended to limit the invention to theparticular form disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the present invention as defined by the appendedclaims. Note, the headings are for organizational purposes only and arenot meant to be used to limit or interpret the description or claims.Furthermore, note that the word “may” is used throughout thisapplication in a permissive sense (i.e., having the potential to, beingable to), not a mandatory sense (i.e., must).” The term “include”, andderivations thereof, mean “including, but not limited to”. The term“coupled” means “directly or indirectly connected”.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

U.S. patent application Ser. No. 10/624,394 titled“Temperature-to-Digital Converter” invented by Troy L. Stockstad andfiled on Jul. 22, 2003, is hereby incorporated by reference in itsentirety as though fully and completely set forth herein.

U.S. patent application Ser. No. 10/924,176 titled “IntegratedResistance Cancellation in Temperature Measurement Systems” invented byScott C. McLeod and filed on Aug. 23, 2004, is hereby incorporated byreference in its entirety as though fully and completely set forthherein.

As used herein, the expression “alternately” is meant to imply passingback and forth from one state, action, or place to another state,action, or place, respectively. For example, “alternately providing afirst signal and a second signal” would mean providing the first signal,then providing the second signal, then providing the first signal again,then providing the second signal again, and so on. Similarly,alternately providing a first signal and a second signal at a certainfrequency (or rate) means that each signal, whether the first signal orthe second signal, is provided once during a time period defined as1/frequency (or 1/rate, respectively).

A “diode-junction-voltage” (V_(BE)) refers to a voltage measured acrossthe junction of a diode, or a difference in voltage between a voltagemeasured at the anode of the diode junction with respect to a commonground and a voltage measured at the cathode of the diode junction withrespect to the common ground. A “change in diode-junction-voltage”(ΔV_(BE)) refers to a change in diode-junction-voltage for a chosendiode, either in time or in different circuit configurations. Forexample, if in one circuit configuration V_(BE)=700 mV for a diode, andin a different circuit configuration V_(BE)=655 mV for the diode, thenΔV_(BE)=45 mV for the diode when referencing to the two differentcircuit configurations. Similarly, for example, if at a time point tlV_(BE)=650 mV for a diode, and at a time point t2 V_(BE)=702 mV for thediode, then ΔV_(BE)=52 mV for the diode when referencing time points t1and t2. “Storing” a V_(BE) or V_(BE) value in an integrator generallyrefers to developing a charge corresponding to the V_(BE) value withinthe integrator. “Adding” and/or “subtracting” a V_(BE) or V_(BE) valuein the integrator generally refers to increasing and/or decreasing thedeveloped charge within the integrator, correspondingly to the V_(BE)value.

A diode is used as one way of accessing a PN-junction across whichvoltage measurements to obtain V_(BE) may be made. More generally,diode-junction may also mean PN-junction or NP-junction, which definesthe physical attributes of the junction selected for obtainingtemperature values while performing voltage measurements. Variousembodiments of the circuit are described as utilizing a diode. However,in other embodiments, the operation performed by the diode may beachieved using other circuitry, such as a PN-junction (or NP-junction)present in devices other than a diode, for example bipolar junctiontransistors (BJTs). Therefore, the terms PN-junction, NP-junction,diode, and diode-junction are used interchangeably, and all respectiveterms associated therewith may be interpreted accordingly.

FIG. 2 illustrates one embodiment of a temperature measurement circuitthat utilizes an internal ADC to generate a numeric (i.e. digital)reading of the temperature of a directly coupled PN-junction, which maybe a diode junction. As shown in FIG. 2, the base-emitter junction of atransistor 202 may be coupled to ADC 210, which may comprise input nodesInP 228, InN 229, amplifier 212, quantizer 214, and decimation filter216 providing the final digital temperature reading, which may be anN-bit binary number. While certain components of ADC 210 are shown forillustrative purposes, ADC 210 is not restricted to the embodimentshown. Those skilled in the art will appreciate that a number ofalternate implementations of ADC 210 are possible, and while suchalternate implementations are not shown, they are contemplated.

Current source 204 may be used to force a current into the emitter oftransistor 202, thus generating a V_(BE) value across the base-emitterjunction of transistor 202. In one embodiment, current source 204 isoperable to provide currents of varying values. Thus, applying asequence of different discrete currents to the base-emitter junction oftransistor 202 will result in a ΔV_(BE) value that may be used ingenerating the desired temperature readings. As also illustrated in FIG.2, EMI noise coupling to terminals DP 208 and DN 209 may result inerrors at the output of ADC 210. More specifically, in the embodimentshown in FIG. 2, EMI noise coupling to DP 208 may induce a current intransistor 202, leading to erroneous readings of the final temperaturevalue at the output of ADC 210.

In one set of embodiments, a ΔV_(BE) developed across DP 208 and DN 209may be obtained by current source 204 forcing a low current into theemitter of transistor 202, then subsequently forcing a correspondinghigh current into the same emitter. Based on equation (2), ΔV_(BE)across the base-emitter junction of transistor 202 may then be definedas:

$\begin{matrix}{{\Delta\; V_{BE}} = {\eta\frac{kT}{q}*{{\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)}.}}} & (3)\end{matrix}$If Δi is used to designate any additional current induced in transistor202, for example current induced by EMI, then ΔV_(BE) may be re-writtento account for the additional induced current as:

$\begin{matrix}{{\Delta\; V_{BE}^{\prime}} = {\eta\frac{kT}{q}*{{\ln\left( \frac{I_{HIGH} + {\Delta\; i}}{I_{LOW} + {\Delta\; i}} \right)}.}}} & (4)\end{matrix}$The error portion of ΔV_(BE), i.e. the difference between ΔV′_(BE) andΔV_(BE), may be expressed by:

$\begin{matrix}{{{\Delta\; V_{BE}^{\prime}} - {\Delta\; V_{BE}}} = {\eta\frac{kT}{q}*{\left\lbrack {{\ln\left( \frac{I_{HIGH} + {\Delta\; i}}{I_{LOW} + {\Delta\; i}} \right)} - {\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)}} \right\rbrack.}}} & (5)\end{matrix}$If ΔT is used to designate the error change in temperature (otherwisereferred to as the temperature error) due to the additional inducedcurrent Δi, the difference between ΔV′_(BE) and ΔV_(BE), may alternatelybe expressed as:

$\begin{matrix}{{{\Delta\; V_{BE}^{\prime}} - {\Delta\; V_{BE}}} = {\eta\frac{k\;\Delta\; T}{q}*{{\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)}.}}} & (6)\end{matrix}$Combining equations (5) and (6), ΔT may be expressed as:

$\begin{matrix}{{\Delta\; T} = {T*{\left\lbrack \frac{{\ln\left( \frac{I_{HIGH} + {\Delta\; i}}{I_{LOW} + {\Delta\; i}} \right)} - {\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)}}{\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)} \right\rbrack.}}} & (7)\end{matrix}$In one set of embodiments, Δi may assume a sinusoidal form and may beexpressed as:Δi=A*sin(ω).  (8)The average value of the temperature error may be obtained byintegrating equation (7) over 2π with respect to ω.

$\begin{matrix}{{\Delta\; T} = {\frac{T}{2\pi}{\int_{0}^{2\pi}{\left\lbrack \frac{{\ln\left( \frac{I_{HIGH} + {A\;\sin\;\omega}}{I_{LOW} + {A\;\sin\;\omega}} \right)} - {\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)}}{\ln\left( \frac{I_{HIGH}}{I_{LOW}} \right)} \right\rbrack{{\mathbb{d}\omega}.}}}}} & (9)\end{matrix}$By way of example the value of I_(HIGH) may be designated as 170 μA, andthe value of I_(LOW) may be designated as 10 μA, leading to:

$\begin{matrix}{{\Delta\; T} = {\frac{T}{2\pi}{\int_{0}^{2\pi}{\left\lbrack \frac{{\ln\left( \frac{{170\mu\; A} + {A\;\sin\;\omega}}{{10\mu\; A} + {A\;\sin\;\omega}} \right)} - {\ln(17)}}{\ln(17)} \right\rbrack{{\mathbb{d}\omega}.}}}}} & (10)\end{matrix}$

FIG. 3 shows a diagram illustrating the EMI induced error ΔT as afunction of peak EMI induced current, illustrated by function curve 300.One possible way of minimizing EMI induced temperature error is to add acapacitor across terminals DP 208 and DN 209, which would shunt EMIcurrents. For many embodiments, the value of a capacitor sufficientlylarge to make the circuit less susceptible to EMI noise may need to bein the 2200 pF range. However, in embodiments where ADC 210 features adelta-sigma ADC architecture, a maximum allowable input capacitance maybe in the 100 pF range due to the sampling time requirements of ADC 210.In other words, a maximum allowable shunt capacitance value mayfundamentally result from the settling time requirement of ADC 210, forexample when ADC 210 is an internal delta-sigma ADC. For embodimentsthat employ such ADCS, in order to accommodate an increased inputcapacitance of approximately twenty times the allowable value (2000 pFrange vs. 100 pF range), the number of averages may need to be decreasedand the settling time requirement may need to be increased withoutincreasing the over-all conversion time for conversions performed by theADC.

FIG. 4 shows one embodiment where a front-end sample-and-hold circuit400 is employed to sample the voltage across terminals DP 208 and DN 209(i.e. the voltage across the base-emitter junction of transistor 202)when a first current (420) associated with the temperature measurementis forced into the emitter of transistor 202. The junction voltage maysimilarly be sampled for a subsequent different current (a summedcombination of currents 420 and 422) that is forced into the emitter oftransistor 202. The sample- and hold-circuit may provide the variousthus obtained base-emitter junction voltages as ΔV_(BE) values at itsoutputs OutM 409 and OutP 408 to an ADC for conversion at the full ADCconversion speed. The overall sample time for each diode voltage may bedependent on the value of the current forced through the emitter oftransistor 202, enabling the total conversion time to be appropriatelyand proportionally divided to allow the maximum settling time of V_(BE)developed across the base-emitter junction of transistor 202 for thelower input currents and the minimum settling time of V_(BE) developedacross the base-emitter junction of transistor 202 for the higher inputcurrents. While the embodiment shown features sequentially applying twodifferent currents to the junction, other embodiments with fewer or morecurrent sources providing more than two different currents are possibleand are contemplated.

Referring again to FIG. 4, as previously mentioned, OutP 408 and OutM409 may be coupled to the inputs of an internal ADC of a temperaturemeasurement system, such as inputs InP 228 and InN 229 of ADC 210,respectively, where ADC 210 may be a delta-sigma ADC. As shown in FIG.4, a capacitor 402 may be coupled across terminals DP 208 and DN 209 toshunt EMI currents that may be induced in transistor 202, and may causeerroneous temperature readings. In order to allow for a sufficientlylarge value for capacitor 402 to effectively minimize the effects of EMIcurrents that may be induced in transistor 202, sampler circuit 400 maybe configured to sample the voltage between terminals DP 208 and DN 209at a preferred rate. The preferred rate may be determined in part basedon the consideration that the signals at output ports OutM 409 and OutP408 of sampler circuit 400 provide stable inputs to ADC 210.

The sampling time required for sampling the V_(BE) voltages across thebase-emitter junction of transistor 202 and forming a ΔV_(BE) samplevoltage that is provided to ADC 210 across outputs OutM 409 and OutP 408may be obtained based on the settling times of the V_(BE) voltages. Thesettling time for a given V_(BE) voltage, with ADC 210 having an N-bitoutput, may be expressed as:t _(s) =RC*ln(2^(N)),  (11)where, in the embodiment of FIG. 2 and FIG. 4, R represents the dynamicbase-emitter junction resistance r_(e) of transistor 202, and Crepresents the capacitance value of shunt capacitor 402. The value forr_(e) may be obtained from known device characteristics of transistor202 and from equation (1):

$\begin{matrix}{r_{e} = {\frac{\eta\;{kT}}{{qI}_{C}}.}} & (12)\end{matrix}$Substituting r_(e) for R into equation (11) yields a value for ‘t_(s)’,where ‘t_(s)’ represents the settling time for each voltage sampled atthe base-emitter junction of transistor 202. In other words, ‘t_(s)’ isa minimum value for the time required for obtaining an accurate samplevalue of V_(BE) for a given input current I_(C).

In one set of embodiments, sampler circuit 400 may be configured toprovide samples of ΔV_(BE) to ADC 210, where each ΔV_(BE) sample may bedeveloped across the output of amplifier 412 and/or amplifier 414,respectively. In such embodiments, each ΔV_(BE) sample is based on afirst V_(BE) voltage developed across the base-emitter junction oftransistor 202 in response to a lower current (420) being forced intothe emitter of transistor 202, followed by a second V_(BE) voltagedeveloped across the base-emitter junction of transistor 202 in responseto a larger current (a summed combination of currents 420 and 422) beingforced into the emitter of transistor 202. It should be noted thatalternate configurations for delivering the currents of varying valuesto the emitter of transistor 202, while not shown, are possible and arecontemplated. For example, instead of the larger current being a summedcombination of currents 420 and 422 it may be provided by a singlecurrent source, and so on. Alternately, more than two different currentvalues may be forced into the emitter of transistor 202 in order to formthe ΔV_(BE) voltage samples.

Let ‘t_(st)’ designate the minimum time required to form a stableΔV_(BE) voltage sample that will be provided to ADC 210 across outputsOutM 409 and OutP 408, where ‘t_(st)’ is obtained by summing therespective ‘t_(s)’ values corresponding to the V_(BE) voltages sampledacross the base-emitter junction of transistor 202 and used indeveloping the ΔV_(BE) voltage sample. Then, if ADC 210 has a preferredsampling frequency ‘F_(p)’ that yields a per-ΔV_(BE)-sample time periodlower than the largest expected value of ‘t_(st)’, sampling circuit 400may be operated to sample V_(BE) voltage values at a rate that yields aper-ΔV_(BE)-sample time period that is at least ‘t_(st)’.

The operation of sampler circuit 400 according to one embodiment willnow be described. In this embodiment, ADC 210 is a delta-sigma ADC andis operated to convert 2^(N) ΔV_(BE) samples for an N-bit digital(numeric) output corresponding to the temperature of the base-emitterjunction of transistor 202. In the configuration shown, as part of theconversion process ADC 210 may average out AC components of noise thatmay result from a noisy reference voltage source, thermal noise in thecapacitor components, and/or active components in ADC 210. Samplercircuit 400 used in combination with shunt capacitor (which may be inthe nF range) may operate to substantially reduce DC components of noisethat may be caused primarily by EMI induced current in transistor 202. Asingle sampling period for sampler circuit 400 is designated as the timeperiod allocated to sampler circuit 400 to form a ΔV_(BE) voltage sampleat the differential output of amplifier 412 and/or 414. The samplingperiod may be selected to be sufficiently large based on ‘t_(st)’,according to the previously described principles.

The timing information corresponding to the operation of sampler circuit400 according to one embodiment is shown in FIGS. 5A-5F, withcorresponding scaled timing diagrams in FIGS. 6A-6F. As shown in theillustrated timing diagrams, a signal is asserted by transitioning froma zero (or low) value to a high value. However, in alternate embodimentsone or more signals may be asserted by transitioning from a high valueto a low and/or zero value. FIG. 5A illustrates the sampling clocksignal for ADC 210, which is selected to be 100 KHz by way of example.FIG. 5B illustrates the start signal for the overall sampling/conversionprocess, which, when asserted, enables sampler circuit 400 to beginoperation. When the signal shown in FIG. 5C is asserted, it enables ADC210 to begin operation. The time elapsed between the asserting of thesignal of FIG. 5B and the signal of FIG. 5C may constitute one samplingperiod of sampling circuit 400.

By way of example, the operation of sampler circuit will be describedfor the circuit section that contains amplifier 412. At the start of thesampling process, all switches, including switches S1-S12, in samplercircuit 400 are open. A low-value current 420 (which is selected to be10 μA for purposes of illustration) may be injected into the emitter oftransistor 202, resulting in a V_(BE) voltage developed across nodes DP208 and DN 209, with corresponding charges developed across capacitorsC₁ and C₂, respectively. Switches S1, S2, S5, S6, and S3 and S7 may thenbe closed. Thus, DP 208 and DN 209 may be coupled to the non-invertingand inverting inputs of amplifier 412 via input capacitors C₁ and C₂,respectively.

With S1 and S2 closed, the voltage is allowed to settle across theinputs of amplifier 412, and by virtue of S5 and S6, and S3 and S7 beingclosed, the outputs of amplifier 412 will each reflect a value of vcmo,with any offset voltage V_(OFF) that may affect the output equallydivided between the two terminals. The offset voltage V_(OFF) may beeliminated (zeroed) from the output terminals of amplifier 412 byopening switches S5, S6, S3 and S7, and closing S4 and S8, which resultsin each output of amplifier 412 settling at a voltage level of vcmo.

Once the outputs of amplifier 412 have each settled to a voltage levelof vcmo, the current forced into the emitter of transistor 202 may beswitched to a multiple of the first current, administered in this caseby flipping current switch S0 to combine the currents 420 and 422,which, for purposes of illustration, is chosen to be 160 μA, resultingin a total current of 170 μA flowing into the emitter of transistor 202.In FIG. 5D, each pulse is indicative of S0 being operated to combine thecurrents from current sources 420 and 422, with the de-asserted portionsof the signal indicating that S0 is being operated to couple currentsource 420 to the emitter of transistor 202, thus providing a current of10 μA. By injecting the larger current, the V_(BE) voltage across DP 208and DN 209 will change, and charge will be injected into capacitors C₃and C₄, respectively. In one embodiment, the ratio of C₃ to C₁ and C₄ toC₂ is selected such that the voltage change appearing across the outputsof amplifier 412 resulting from the respective charges injected into C₃and C₄ is amplified. Alternate embodiments may contain values for C₃ andC₄ such that the voltage change is not gained-up. In either case, thevoltage across the outputs of amplifier 412 will now correspond to thechange in voltage ΔV_(BE) for the base-emitter junction of transistor202.

Now, by opening S1 and S2, nodes DP 208 and DN 209 may be decoupled fromamplifier 412, resulting in the ΔV_(BE) voltage being held across theoutput terminals of amplifier 412. FIG. 5F illustrates the settling timeof the V_(BE) voltage developed across the base-emitter junction oftransistor 202 each time either 10 μA or 170 μA is forced into theemitter (corresponding to FIG. 5D as described above). Sampler circuitmay now be operated to provide the current ΔV_(BE) voltage sample heldat the outputs of amplifier 412 to ADC 210 via output ports OutM 409 andOutP 408, by alternately closing and opening switch pairs S9/S12 andS10/S11. The rate at which these switch pairs are toggled may becommensurate with the preferred sampling frequency F_(p) of ADC 210.Because the voltage value actually provided to ADC 210 is ΔV_(BE), notV_(BE), switches S9 through S12 are operated to alternately provideΔV_(BE) and −ΔV_(BE) across output terminals OutM 409 and OutP 408. Forexample, when S9 and S12 are closed, and S10 and S11 are open, thenon-inverting output terminal of amplifier 412 is coupled tonon-inverting output terminal OutP 408 while the inverting outputterminal of amplifier 412 is coupled to inverting output terminal OutM409. In contrast, when S10 and S11 are closed, and S9 and S12 are open,the non-inverting output terminal of amplifier 412 is coupled to theinverting output terminal OutM 409 while the inverting output terminalof amplifier 412 is coupled to non-inverting output terminal OutP 408.

While S9 through S12 are operated to provide the ΔV_(BE) samples to ADC210, the circuit section of sampler circuit 400 that contains amplifier414 may be operated to develop the next ΔV_(BE) sample across theoutputs of amplifier 414 in a manner similar to that described above forthe circuit section that contains amplifier 412. Thus, while amplifier414 is coupled to DP 208 and DN 209, amplifier 412 is operated toprovide the currently residing ΔV_(BE) voltage across its outputterminals to ADC 210, and conversely, while amplifier 412 is coupled toDP 208 and DN 209, amplifier 414 is operated to provide the currentlyresiding ΔV_(BE) voltage across its output terminals to ADC 210. In eachcase, only one of the two amplifiers 412 and 414 will be coupled to DP208 and DN 209 at a time.

When decoupling amplifier 412, for example, S1 and S2 may be opened assoon as the V_(BE) voltage developed across the base-emitter junction oftransistor 202 as a result of the higher current (170 μA) being forcedinto the emitter settles to a stable value. FIGS. 6A through 6F show ingreater detail the corresponding waveforms of FIGS. 5A through 5F,respectively. As illustrated in FIG. 6D, the asserted signal indicatesan injection of the higher current (170 μA) into the emitter oftransistor 202, as also indicated in FIG. 6F, which shows the V_(BE)signal developed as a result of the injected current. The settling timefor V_(BE) will be shorter when injecting the larger current (170 μA),as shown by the faster rise time (steeper angle) of the V_(BE) pulse inFIG. 6D. When the smaller current (10 μA) is injected, as indicated bythe signal of FIG. 6D transitioning from a high state to a low state,the settling time of V_(BE) will be longer, as indicated by the longerfall time of the V_(BE) pulse in FIG. 6F.

FIG. 5E and corresponding FIG. 6E illustrate the operating of switchesS9 through S12 (and the corresponding switches for amplifier 414) whileproviding a given ΔV_(BE) sample to ADC 210. As indicated, the ΔV_(BE)sample voltage signal, as shown in FIGS. 5E and 6E, follows the samplingclock of ADC 210 illustrated in FIG. 5A and correspondingly in FIG. 6A.For a chosen value of 10 μA (or 5 μA) for current source 420 and 160 μAfor current source 422, and a value of 7 nF for shunt capacitor 402, thesampling time for each ΔV_(BE) (‘t_(st)’) voltage sample may be set to320 μsec. However, functional values for capacitor 402 and the samplingtime may be set as required by considerations of EMI induced current intransistor 202 and the preferred operating frequency of ADC 210,according to equations (3) through (12) as previously set forth. Thesampling time allocated for forming and alternately providing a ΔV_(BE)voltage sample at output terminals OutM 409 and OutP 408 is illustratedin FIG. 5E. In the embodiment shown, an example sampling period 502extends to 320 μsec, during which one of amplifiers 412 and 414 insampler circuit 400 is operated to form a ΔV_(BE) sample voltage, andthe other one is operated to provide the ΔV_(BE) sample currentlyresiding across its outputs to ADC 210. A delay equivalent to a fullsampling period is available to form the first ΔV_(BE) sample before ADC210 is engaged, as previously mentioned and shown in FIG. 5C (andcorresponding FIG. 6C), wherein ADC 210 doesn't begin operating untilthe control signal shown in FIG. 5C is asserted.

In one embodiment, sampling period 502 may be divided according to therise and fall time of the V_(BE) signal, as illustrated in FIG. 5F andcorresponding FIG. 6F, for sampling V_(BE) for the 10 μA (or 5 μA)current and the 170 μA current, respectively. That is, switches S1through S12 (and corresponding switches for amplifier 414) may be openedand closed at a rate corresponding to the minimum ‘t_(s)’ required forV_(BE) to stabilize for each corresponding applied input current. Forexample, the combination of switch positions required for samplingV_(BE) for the lower current may be held for a longer portion ofsampling period 502, while the combination of switch positions requiredfor sampling V_(BE) for the higher current may be held for a shorterportion of sampling period 502. Thus, sampler circuit 400 may take fulladvantage of the dynamic nature of emitter resistance r_(e) by makingthe duty cycle of sampling period 502 proportional to the respectivesettling times of the V_(BE) signal for the different input currents.For example, a settling time of 300 μsec may be allocated for V_(BE)settling when the input current is 10 μA, and 20 μsec may be allocatedfor V_(BE) settling when the input current is 170 μA.

It follows that in this embodiment, if the operating frequency of theclock for ADC 210 is 100 KHz, shunt capacitor 402 is selected to be 7nF, and sampling period 502 is designated to be 320 μsec, then samplercircuit 400 may obtain and provide 64 distinct ΔV_(BE) samples to ADC210 for producing a numeric 11-bit value corresponding to the measuredtemperature of the base-emitter junction of transistor 202. Furthermore,each ΔV_(BE) sample may be provided to ADC 210 at the ADC 210 operatingfrequency of 100 KHz for the duration of a full sampling period of 320μsec, during which a value of ΔV_(BE) and −ΔV_(BE) are provided to ADC210 on each alternate clock cycle. FIG. 7A and FIG. 7B show signals5E/6E and 5F/6F, respectively, in more detail on a finer scale,illustrating the relationship between V_(BE) settling time for thedifferent input currents (FIG. 7B) and the control signal operatingswitches S19 through S12 (and corresponding switches for amplifier414—FIG. 7A).

It should also be noted that transistor 410 and current source 424(which may be selected to provide a current of identical value tocurrent source 420) are configured as shown in FIG. 4 to providestabilization of the current in transistor 410. Parts or the whole ofthe whole of the circuit portion comprising transistor 410 and currentsource 424 may be omitted, and those skilled in the art will appreciatethat alternate methods may or may not be employed to stabilize thevoltage at node DN 209 as required.

Thus, various embodiments of the systems and methods described above mayfacilitate the design of a temperature sensor circuit that utilizes alocal or remote PN-junction for obtaining temperature readings andperforming analog to digital conversion concurrently with samplingV_(BE) voltages developed across the PN-junction in response to appliedcurrents of varying magnitude. Accordingly, the temperature sensorcircuit may use an ADC, for example a delta-sigma ADC, and takeadvantage of the ability of the ADC to average out AC components oferrors introduced by a noisy reference voltage, noise from activecomponents in the ADC, and/or thermal capacitor noise. Concurrently, thetemperature sensor circuit may also minimize the DC component of errorsintroduced by current(s) induced in the PN-junction by EMI. Optimized,across-the-board error reduction and measurement fidelity andconsistency may be achieved using a sampling circuit in conjunction witha shunt capacitor coupled across the PN-junction, with the samplercircuit providing ΔV_(BE) samples to the ADC, and the ADCsampling/converting the thus provided ΔV_(BE) voltages to generate anN-bit number representative of the measured temperature of thePN-junction.

Although the embodiments above have been described in considerabledetail, other versions are possible. Numerous variations andmodifications will become apparent to those skilled in the art once theabove disclosure is fully appreciated. It is intended that the followingclaims be interpreted to embrace all such variations and modifications.Note the section headings used herein are for organizational purposesonly and are not meant to limit the description provided herein or theclaims attached hereto.

We claim:
 1. A method comprising: sampling output signals generated by asemiconductor device having a specified, substantially non-linearinput-output characteristic that varies with temperature and beingsubject to effects of electromagnetic interference (EMI), wherein saidsampling comprises obtaining the output signals at a pair of outputterminals of the semiconductor device; generating specified signals fromthe output signals; successively providing each respective one of thespecified signals to a converter circuit, comprising providing eachrespective one of the specified signals for a respective specified timeperiod that is longer than a sampling period of the converter circuit;and the converter circuit receiving the specified signals, averaging thereceived specified signals, and producing a numeric value based on theaveraged received specified signals, wherein the numeric valuecorresponds to a temperature of the semiconductor device.
 2. The methodof claim 1, wherein said generating the specified signals comprisesgenerating each subsequent respective one of the specified signalsduring the respective specified time period when a previously generatedrespective one of the specified signals is provided to the convertercircuit.
 3. The method of claim 1, further comprising successivelyproviding to the semiconductor device during each respective specifiedtime period at least a first input signal and a second input signal thatdiffer in magnitude, wherein the output signals comprise a first outputsignal corresponding to the first input signal and a second outputsignal corresponding to the second input signal; wherein the firstoutput signal has a first settling time and the second output signal hasa second settling time.
 4. The method of claim 3, wherein the firstinput signal and the second input signal comprise current signals,wherein the semiconductor device comprises a base-emitter junction,wherein each of the output signals is a base-emitter voltage (VBE)signal developed across the base-emitter junction, and wherein each ofthe specified signals is a voltage difference between two successive VBEsignals (ΔVBE).
 5. The method of claim 4, wherein the base-emitterjunction is comprised in one of: a diode; and a BJT.
 6. The method ofclaim 1, wherein the semiconductor device is one of: a diode; and a BJT;wherein the output signals are VBE signals, and wherein the specifiedsignals are ΔVBE signals.
 7. The method of claim 1, wherein theconverter circuit is an analog to digital converter (ADC).
 8. The methodof claim 7, wherein the ADC is a delta-sigma ADC comprising a switchedcapacitor integrator configured to perform said averaging the receivedspecified signals.
 9. The method of claim 1, further comprising:providing to the converter circuit an inverse of the respective one ofthe specified signals during each specified time period.
 10. The methodof claim 9, further comprising: alternately providing the respective oneof the specified signals and the inverse of the respective one of thespecified signals to the converter circuit during the respectivespecified time period.
 11. A system comprising: a sampler circuit havinginput terminals and output terminals, wherein the input terminals areconfigured to couple to corresponding terminals of a semiconductordevice, the semiconductor device having a specified, substantiallynon-linear input-output characteristic that varies with temperature andbeing subject to effects of electromagnetic interference (EMI); and aconverter circuit configured to operate at a first frequency and havinginput ports configured to couple to the output terminals of the samplercircuit; wherein the sampler circuit is configured to sample outputsignals generated by the semiconductor device and generate samplescorresponding to the output signals, wherein the sampler circuit isconfigured to provide to the converter circuit each respective one ofthe samples for a specified time period that is longer than a periodcorresponding to the first frequency; wherein the converter circuit isconfigured to receive the samples from the sampler circuit, and producea numeric value based on an average of the received samples, wherein thenumeric value corresponds to a temperature of the semiconductor device.12. The system of claim 11, wherein the sampler circuit comprises a pairof operational amplifiers (op-amps); wherein the input terminals of thesampler circuit are configured to couple respective inputs of eachop-amp to the corresponding terminals of the semiconductor device, andthe output terminals are configured to couple respective outputs of eachop-amp to the input ports of the converter circuit; and wherein one ofthe op-amps is configured to generate, during each specified timeperiod, a next respective one of the samples concurrently with the otherop-amp providing to the converter circuit an existent respective one ofthe samples generated during an immediately preceding specified timeperiod.
 13. The system of claim 11, further comprising one or more inputdevices configured to successively provide to the semiconductor device,during each specified time period, at least a first input signal and asecond input signal that differ in magnitude, wherein the output signalscomprise a first output signal corresponding to the first input signaland a second output signal corresponding to the second input signal;wherein the first output signal has a first settling time and the secondoutput signal has a second settling time.
 14. The system of claim 13,wherein the one or more input devices comprise one or more currentsources, wherein the first input signal and the second input signalcomprise current signals, wherein the semiconductor device comprises abase-emitter junction, wherein each of the output signals is abase-emitter voltage signal developed across the base-emitter junction,and wherein each of the samples is a voltage difference between twosuccessive base-emitter voltage signals.
 15. The system of claim 14,wherein the base-emitter junction is comprised in one of: a diode; and abipolar junction transistor (BJT).
 16. The system of claim 11, whereinthe semiconductor device is one of: a diode; and a BJT; wherein theoutput signals are base-emitter voltage signals, and wherein the samplesare voltage difference signals derived from a voltage difference betweentwo successive base-emitter voltage signals.
 17. The system of claim 11,wherein the converter circuit is an analog to digital converter (ADC).18. The system of claim 17, wherein the ADC is a delta-sigma ADCcomprising a switched capacitor integrator configured to generate theaverage of the received samples.
 19. The system of claim 11, wherein thesampler circuit is configured to provide to the converter circuit,during each specified time period, an inverse of the respective one ofthe samples.
 20. The system of claim 19, wherein the sampler circuit isconfigured to alternately provide to the converter circuit, during eachspecified time period, the respective one of the specified signals andthe inverse of the respective one of the specified signals.